Wide Bandgap Semiconductors for Power Electronics: Materials, Devices, Applications, パワーエレクトロニクス用ワイドバンドギャップ半導体: 材料、デバイス、アプリケーション, 9783527824717, 978-3-527-82471-7【電子書籍 / 1ユーザー】
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Description
Wide Bandgap Semiconductors for Power Electronics is a comprehensive and authoritative guide to wide bandgap materials silicon carbide, gallium nitride, diamond and gallium(III) oxide. With contributions from an international panel of experts, the book offers detailed coverage of the growth of these materials, their characterization, and how they are used in a variety of power electronics devices such as transistors and diodes and in the areas of quantum information and hybrid electric vehicles.
The book is filled with the most recent developments in the burgeoning field of wide bandgap semiconductor technology and includes information from cutting-edge semiconductor companies as well as material from leading universities and research institutions. By taking both scholarly and industrial perspectives, the book is designed to be a useful resource for scientists, academics, and corporate researchers and developers.
This important book:
- Presents a review of wide bandgap materials and recent developments
- Links the high potential of wide bandgap semiconductors with the technological implementation capabilities
- Offers a unique combination of academic and industrial perspectives
- Meets the demand for a resource that addresses wide bandgap materials in a comprehensive manner
Written for materials scientists, semiconductor physicists, electrical engineers, Wide Bandgap Semiconductors for Power Electronics provides a state of the art guide to the technology and application of SiC and related wide bandgap materials.
Contents:
Volume 1
Part I Silicon Carbide (SiC)
1 Dislocation Formation During Physical Vapor Transport Growth of 4H-SiC Crystals
2 Industrial Perspectives of SiC Bulk Growth
3 Homoepitaxial Growth of 4H-SiC on Vicinal Substrates
4 Industrial Perspective of SiC Epitaxy
5 Status of 3C-SiC Growth and Device Technology
6 Intrinsic and Extrinsic Electrically Active Point Defects in SiC
7 Dislocations in 4H-SiC Substrates and Epilayers
8 Novel Theoretical Approaches for Understanding and Predicting Dislocation Evolution and Propagation
9 Gate Dielectrics for 4H-SiC Power Switches: Understanding the Structure and Effects of Electrically Active Point Defects at the 4H-SiC/SiO2 Interface
10 Epitaxial Graphene on Silicon Carbide as a Tailorable Metal?Semiconductor Interface
11 Device Processing Chain and Processing SiC in a Foundry Environment
12 Unipolar Device in SiC: Diodes and MOSFETs
Volume 2
13 Ultra-High-Voltage SiC Power Device
14 SiC Reliability Aspects
15 Industrial Systems Using SiC Power Devices
16 Special Focus on HEV and EV Applications: Activities of Automotive Industries Applying SiC Devices for Automotive Applications
17 Point Defects in Silicon Carbide for Quantum Technology
Part II Gallium Nitride (GaN), Diamond, and Ga2O3
18 Ammonothermal and HVPE Bulk Growth of GaN
19 GaN on Si: Epitaxy and Devices
20 Growth of Single Crystal Diamond Wafers for Future Device Applications
21 Diamond Wafer Technology, Epitaxial Growth, and Device Processing
22 Gallium Oxide: Material Properties and Devices