Fundamentals of Silicon Carbide Technology: Growth, Characterization, Devices and Applications, 炭化ケイ素技術の基礎: 成長、特性評価、デバイスと応用, 9781118313558, 978-1-118-31355-8【電子書籍 / 1ユーザー】
御見積ご希望の場合は別途お問い合わせください。
Description
Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are:
- A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques.
- Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors.
- A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources.
- Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors.
- Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development.
This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Contents:
1 Introduction
2 Physical Properties of Silicon Carbide
3 Bulk Growth of Silicon Carbide
4 Epitaxial Growth of Silicon Carbide
5 Characterization Techniques and Defects in Silicon Carbide
6 Device Processing of Silicon Carbide
7 Unipolar and Bipolar Power Diodes
8 Unipolar Power Switching Devices
9 Bipolar Power Switching Devices
10 Optimization and Comparison of Power Devices
11 Applications of Silicon Carbide Devices in Power Systems
12 Specialized Silicon Carbide Devices and Applications
Appendix A Incomplete Dopant Ionization in 4H-SiC
Appendix B Properties of the Hyperbolic Functions
Appendix C Major Physical Properties of Common SiC Polytypes